KTD2058 transistors equivalent, silicon npn power transistors.
*Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
*Collector Power Dissipation
: PC= 25 W@ TC= 25℃
*Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A)
*Complement to Type KTB1366
*Minimum Lot-.
Image gallery
TAGS
Manufacturer
Related datasheet