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SEMICONDUCTOR
TECHNICAL DATA
KTD2058
TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Complementary to KTB1366.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
VCBO VCEO VEBO
IC IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING 60 60 7 3 0.5 2 25 150
-55 150
UNIT V V V A A
W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2 F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05 J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.
KTD2058 Datasheet
