2SD1117 transistor equivalent, silicon npn power transistor.
*Designed for audio amplifier, series regulators and general
purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 5A
*Wide Area of Safe Operation
*Complement to Type 2SB850
*Minimum Lot-to-Lot variations for robust .
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