Datasheet Details
| Part number | 2SD1126 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.24 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
 2SD1126_InchangeSemiconductor.pdf
|
| Part number | 2SD1126 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.24 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet |
2SD1126_InchangeSemiconductor.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 5A Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications.
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