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2SD1115 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) High DC Current Gain : hFE= 500(Min)@IC= 2A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high voltage switching, igniter applications.

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1115 isc website：www.iscsemi.
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