Datasheet4U Logo Datasheet4U.com

2SD1114 - NPN Transistor

📥 Download Datasheet

Preview of 2SD1114 PDF
datasheet Preview Page 2

Datasheet Details

Part number 2SD1114
Manufacturer INCHANGE
File Size 182.97 KB
Description NPN Transistor
Datasheet download datasheet 2SD1114-INCHANGE.pdf

2SD1114 Product details

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) High DC Current Gain : hFE= 500(Min) @IC= 4A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenoid/ relay drivers Motor control Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltag

📁 2SD1114 Similar Datasheet

  • 2SD1111 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SD1113 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1113K - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SD1115K - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1117 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1118 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1119 - NPN TRANSISTOR (Panasonic Semiconductor)
  • 2SD110 - Silicon NPN Power Transistor (Inchange Semiconductor Company)
Other Datasheets by INCHANGE
Published: |