2SD1816L transistor equivalent, silicon npn power transistor.
*Designed for low frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V (Min)
*Collector Power Dissipation
: PC= 2 W(Max)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for low frequency powe.
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