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2SD1802 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Large current capacitance and wide ASO ·Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 6 A 15 W 1.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1802 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;

IB= 100mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A;

IB= 100mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA;

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1802.