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2SD180 - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier a

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isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier and low speed switching ·Suitable for output stages of 30 ~35 watts audio amplifier and DC-DC converter.
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