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IXTA152N085T7 - Power MOSFET

Features

  • °C °C °C Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance °C - easy to drive and to protect °C 175 ° C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150° C RDS(on) VGS = 10 V, ID = 25 A, Notes 1 Characteristic Values Min.

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Preliminary Technical Information TrenchMVTM IXTA152N085T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 152 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA..7) 85 V 85 V ± 20 152 120 410 25 750 3 V A A A A mJ V/ns 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) 360 -55 ... +175 175 -55 ...