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IXTA150N15X4-7 - Power MOSFET

Download the IXTA150N15X4-7 datasheet PDF. This datasheet also covers the IXTA150N15X4 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA150N15X4-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA152N085T Power MOSFET IXYS Corporation
IXTA152N085T N-Channel MOSFET INCHANGE
IXTA152N085T7 Power MOSFET IXYS Corporation
IXTA15N50L2 N-Channel MOSFET INCHANGE
IXTA100N04T2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA150N15X4 Power MOSFET
IXTA15N50L2 Power MOSFET
IXTA100N04T2 Power MOSFET
IXTA100N15X4 Power MOSFET
IXTA102N15T Power MOSFET

Full PDF Text Transcription

Click to expand full text
X4-Class Power MOSFETTM Advance Technical Information IXTA150N15X4 IXTA150N15X4-7 N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 150 20 30 V V V V TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 150 120 260 75 1 10 480 -55 ... +175 175 -55 ... +175 A A A A J V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force 10..65 / 2.2..14.6 N/lb TO-263 TO-263 (7Leads) 2.5 g 3.
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