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IXSM45N100 - Low VCE(sat) IGBT - Short Circuit SOA Capability

Download the IXSM45N100 datasheet PDF. This datasheet also covers the IXSH45N100 variant, as both devices belong to the same low vce(sat) igbt - short circuit soa capability family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages.
  • Guaranteed Short Circuit SOA capability.
  • Low VCE(sat) - for low on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity BVCES VGE(th) ICES IGES VCE(sat) IC IC = 3 mA, VGE = 0 V = 4 mA, VCE = VGE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXSH45N100_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXSM40N60 Low VCE(sat) IGBT
IXSM40N60A Low VCE(sat) IGBT
IXSM25N100 Low VCE(sat) IGBT
IXSM25N100A Low VCE(sat) IGBT
IXSM30N60 Low VCE(sat) IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Low VCE(sat) IGBT IXSH 45N100 IXSM 45N100 VCES IC25 VCE(sat) = 1000 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 2.7 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 75 45 180 ICM = 90 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A ms TO-247 AD (IXSH) G C E TO-204 AE (IXSM) C W °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque 1.13/10 Nm/lb.in.