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IXSM40N60 - Low VCE(sat) IGBT

Key Features

  • International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q q BVCES VGE(th) I CES I GES VCE(sat) IC IC = 250 µA, VGE = 0 V = 4 mA, VCE = VGE V CE = 0.8.
  • VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V.

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Other Datasheets by IXYS (Littelfuse)

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IXSM40N60A Low VCE(sat) IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A 600 V 600 V I C25 75 A 75 A VCE(sat) 2.5 V 3.0 V Short Circuit SOA Capability Symbol www.DataSheet4U.com V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TJ = 125°C, RG = 2.7 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive T C = 25°C Maximum Ratings 600 600 ±20 ±30 75 40 150 ICM = 80 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ...