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IXSK35N120AU1 - High Voltage IGBT

Key Features

  • International standard package JEDEC TO-264 AA.
  • High frequency IGBT and anti-parallel FRED in one package.
  • 2nd generation.

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IXSK35N120BD1 HIGH VOLTAGE IGBT WITH DIODE
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage IGBT with Diode Combi Pack Short Circuit SOA Capability IXSK35N120AU1 VCES IC25 VCE(sat) = 1200 V = 70 A = 4V www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 720 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200 ±20 ±30 70 35 140 ICM = 70 @ 0.8 VCES 10 300 190 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W W °C °C °C °C Nm/lb.in.