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IXSH25N100A - Low VCE(sat) IGBT

Download the IXSH25N100A datasheet PDF. This datasheet also covers the IXSM25N100 variant, as both devices belong to the same low vce(sat) igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q q BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 2.5 mA, VCE = VGE V CE = 0.8.
  • VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXSM25N100_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXSH25N100 Low VCE(sat) IGBT
IXSH25N120A IGBT
IXSH24N60AU1 HiPerFASTTM IGBT with Diode
IXSH24N60U1 HiPerFASTTM IGBT with Diode
IXSH15N120A IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Capability www.DataSheet4U.com Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TJ = 125°C, RG = 4.7 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 0.6 • V CES, TJ = 125°C RG = 33 Ω, non repetitive T C = 25°C Maximum Ratings 1000 1000 ±20 ±30 50 25 100 ICM = 50 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ...