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IXSH15N120BD1 - Improved SCSOA Capability

Download the IXSH15N120BD1 datasheet PDF. This datasheet also covers the IXST15N120BD1 variant, as both devices belong to the same improved scsoa capability family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Blocking Voltage.
  • Epitaxial Silicon drift region - fast switching - small tail current - low switching losses.
  • MOS gate turn-on for drive simplicity.
  • Molding epoxies meet UL 94 V-0 flammability classification.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXST15N120BD1_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXSH15N120A IGBT
IXSH15N120AU1 IGBT
IXSH24N60AU1 HiPerFASTTM IGBT with Diode
IXSH24N60U1 HiPerFASTTM IGBT with Diode
IXSH25N100 Low VCE(sat) IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preliminary data www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W Non repetitive TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 40 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ...