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IXGT30N60B2 - HiPerFAST IGBT

Download the IXGT30N60B2 datasheet PDF. This datasheet also covers the IXGH30N60B2 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb. in. 6 4 g g z z z Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH30N60B2_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGT30N60B2D1 IGBT IXYS
IXGT30N60C2 HiPerFAST IGBT IXYS
IXGT30N60C2D1 HiPerFAST IGBT IXYS
IXGT32N120A3 Ultra-Low Vsat PT IGBT IXYS
IXGT32N170 High Voltage IGBT IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXGT30N60B HiPerFASTTM IGBT
IXGT30N60BD1 HiPerFASTTM IGBT with Diode
IXGT30N60BU1 HiPerFAST IGBT
IXGT30N120B3D1 GenX3 1200V IGBTs
IXGT31N60 Ultra-Low VCE(sat) IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2 IXGT 30N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 70 A < 1.8 V = 82 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 70 30 150 ICM = 60 190 -55 ... +150 150 -55 ...