Datasheet4U Logo Datasheet4U.com

IXGT30N60B2 - HiPerFAST IGBT

This page provides the datasheet information for the IXGT30N60B2, a member of the IXGH30N60B2 HiPerFAST IGBT family.

Features

  • z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb. in. 6 4 g g z z z Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Datasheet preview – IXGT30N60B2

Datasheet Details

Part number IXGT30N60B2
Manufacturer IXYS Corporation
File Size 605.82 KB
Description HiPerFAST IGBT
Datasheet download datasheet IXGT30N60B2 Datasheet
Additional preview pages of the IXGT30N60B2 datasheet.
Other Datasheets by IXYS Corporation

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2 IXGT 30N60B2 VCES IC25 VCE(sat) tfi typ = 600 V = 70 A < 1.8 V = 82 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 70 30 150 ICM = 60 190 -55 ... +150 150 -55 ...
Published: |