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IXGH28N60B - Ultra-low V Ce(sat) Igbt

Download the IXGH28N60B datasheet PDF. This datasheet also covers the IXGT28N60B variant, as both devices belong to the same ultra-low v ce(sat) igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard packages.
  • Low VCE(sat) - for minimum on-state conduction losses.
  • High current handling capability.
  • MOS Gate turn-on - drive simplicity.
  • Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGT28N60B_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGH28N60A3 Ultra Low Vsat PT IGBT IXYS
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IXGH20N120B High Voltage IGBT IXYS
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH28N60BD1 Low VCE(sat) IGBT
IXGH28N120B High Voltage IGBT
IXGH28N140B3H1 1400V IGBT
IXGH28N30 HiPerFAST IGBT
IXGH28N30A HiPerFAST IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ultra-Low VCE(sat) IGBT with Diode IXGH 28N60B IXGT 28N60B VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C Nm/lb.in. °C g g TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C E G = Gate, E = Emitter, TAB C = Collector, TAB = Collector Mounting torque (M3) TO-247 1.
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