Datasheet4U Logo Datasheet4U.com

IXGH28N120B - High Voltage IGBT

Features

  • High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers International standard packages JEDEC TO-268 and JEDEC TO-247 AD Low switching losses, low V(sat) MOS Gate turn-on - drive simplicity Advantages BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA , VGE = 0 V = 250 µA, VCE = VGE VCE = VCES, VGE= 0 V VCE = 0 V, VGE = ±20 V IC = 28A, VGE = 15 V High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) © 2004 IXYS All.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXGH28N120BD1 High Voltage IGBT IXYS
IXGH28N60A3 Ultra Low Vsat PT IGBT IXYS
IXGH20N100 IGBT IXYS
IXGH20N120B High Voltage IGBT IXYS
IXGH20N140C3H1 GenX3 1400V IGBTs IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGH28N140B3H1 1400V IGBT
IXGH28N30 HiPerFAST IGBT
IXGH28N30A HiPerFAST IGBT
IXGH28N30B HiPerFAST IGBT
IXGH28N60B Ultra-low V Ce(sat) Igbt

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE(sat) = 3.5 V tfi(typ) = 160 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C Maximum Ratings 1200 1200 ± 20 ± 30 50 28 150 ICM = 120 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E W °C °C °C °C °C G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in.
Published: |