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IXFK20N80Q - Power MOSFET

Features

  • Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±200 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA mA mA W.
  • IXYS advanced low Qg process.
  • International standard packages.
  • Epoxy meet UL 94 V-0, flammability classification.
  • Low RDS (on) low Qg.
  • Avalanche energy and current rated.
  • Fast intrinsic rectifier Advantages.
  • Easy to mount.
  • Space savings.
  • High power densit.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 TO-264 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS(on) = 0.42 W trr £ 250 ns Maximum Ratings 800 800 ±20 ±30 20 80 20 45 1.5 5 360 -55 ... +150 150 -55 ... +150 300 TO-247 TO-264 1.13/10 0.
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