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IXTT16P60P - Power MOSFET

Key Features

  • z z z z TO-247 (IXTH) G D D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.6mm (0.062 in. ) from case for 10s Plastic body for 10s Mounting torque TO-268 TO-247 (TO-247) 300 260 1.13 / 10 5 6 International standard packages Avalanche Rated Rugged PolarPTM process Low package inductance - easy to drive and to protect.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH16P60P IXTT16P60P RDS(on) VDSS ID25 = = ≤ - 600V - 16A 720mΩ TO-268 (IXTT) G S D (TAB) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings - 600 - 600 ±20 ±30 - 16 - 48 - 16 2.5 10 460 - 55 ... +150 150 - 55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g Features: z z z z TO-247 (IXTH) G D D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.6mm (0.062 in.