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IXGN200N170 - High Voltage IGBT

Features

  • miniBLOC, with Aluminium Nitride Isolation.
  • International Standard Package.
  • Isolation Voltage 2500V~.
  • High Current Handling Capability Advantages.
  • High Power Density.
  • Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 3mA, VGE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 125C Characteristic Values Min. Typ.

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Datasheet Details

Part number IXGN200N170
Manufacturer
File Size 207.49 KB
Description High Voltage IGBT
Datasheet download datasheet IXGN200N170 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage IGBT Advance Technical Information IXGN200N170 VCES = 1700V IC90 = 160A V CE(sat)  2.6V tfi(typ) = 535ns E Symbol VCES VCGR VGES VGEM IC25 ILRMS IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 90°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 1 Clamped Inductive Load TC = 25°C 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1700 V 1700 V ±20 V ±30 V 280 A 200 A 160 A 1050 A ICM = 300 A 1360 V 1250 W -55 ... +150 °C 150 °C -55 ... +150 °C 2500 V~ 3000 V~ 1.5/13 Nm/lb.in 1.3/11.5 Nm/lb.
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