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HiPerFETTM Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated High dV/dt, Low trr
IXFN280N07
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IAR EAR EAS
dV/dt
PD TJ TJM Tstg
T L
VISOL
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
50/60Hz, RMS IISOL ≤ 1mA
t = 1min t = 1s
Mounting torque Terminal connection torque
Maximum Ratings 70 70
V V
±20 V ±30 V
280 100 1120
A A A
180 A 60 mJ 3J
20 V/ns 600 W
-55 ... +150 150
-55 ... +150
300
°C °C °C °C
2500 3000
V~ V~
1.5/13 1.3/ 11.5
Nm/lb.in. Nm/lb.in.
IXFN280N07 Datasheet
