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IXDN609SI - Ultrafast MOSFET

Download the IXDN609SI datasheet PDF. This datasheet also covers the IXDD609SI variant, as both devices belong to the same ultrafast mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IXD_609SI is an automotive grade, high-speed gate driver that is qualified according to AEC Q100 standards.

The IXD_609SI output can source and sink 9A of peak current, while producing rise and fall times of less than 45ns.

Both the output and input are rated to 35V.

Features

  • AEC Q100 Qualified.
  • 9A Peak Source/Sink Drive Current.
  • Wide Operating Voltage Range: 4.5V to 35V.
  • AEC Q100 Grade 1 -40°C to +125°C Operating Temperature Range.
  • Logic Input Withstands Negative Swing of up to 5V.
  • Matched Rise and Fall Times.
  • Low Propagation Delay Time.
  • Low, 10A Supply Current.
  • Low Output Impedance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXDD609SI-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS DIVISION IXD_609SI Automotive Grade 9-Ampere, Low-Side, Ultrafast MOSFET Drivers Features • AEC Q100 Qualified • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • AEC Q100 Grade 1 -40°C to +125°C Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V • Matched Rise and Fall Times • Low Propagation Delay Time • Low, 10A Supply Current • Low Output Impedance Applications • Automotive DC/DC Regulators • Electronic Power Steering • Electric Vehicle Power Train Drives • Brushless DC Motors Description The IXD_609SI is an automotive grade, high-speed gate driver that is qualified according to AEC Q100 standards.