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IXDN602 - Ultrafast MOSFET

This page provides the datasheet information for the IXDN602, a member of the IXDF602 Ultrafast MOSFET family.

Description

The IXDF602/IXDI602/IXDN602 dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs.

Each of the two outputs can source and sink 2A of peak current while producing voltage rise and fall times of less than 10ns.

Features

  • 2A Peak Source/Sink Drive Current.
  • Wide Operating Voltage Range: 4.5V to 35V.
  • -40°C to +125°C Extended Operating Temperature Range.
  • Logic Input Withstands Negative Swing of up to 5V.
  • Outputs May be Connected in Parallel for Higher Drive Current.
  • Matched Rise and Fall Times.
  • Low Propagation Delay Time.
  • Low 10A Supply Current.
  • Low Output Impedance.

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Datasheet preview – IXDN602

Datasheet Details

Part number IXDN602
Manufacturer IXYS
File Size 261.99 KB
Description Ultrafast MOSFET
Datasheet download datasheet IXDN602 Datasheet
Additional preview pages of the IXDN602 datasheet.

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Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION Features • 2A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V • Outputs May be Connected in Parallel for Higher Drive Current • Matched Rise and Fall Times • Low Propagation Delay Time • Low 10A Supply Current • Low Output Impedance Applications • Efficient Power MOSFET and IGBT Switching • Switch Mode Power Supplies • Motor Controls • DC to DC Converters • Class-D Switching Amplifiers • Pulse Transformer Driver IXD_602 2-Ampere Dual Low-Side Ultrafast MOSFET Drivers Description The IXDF602/IXDI602/IXDN602 dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs.
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