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IXDN614SI - Ultrafast MOSFET

This page provides the datasheet information for the IXDN614SI, a member of the IXDD614SI Ultrafast MOSFET family.

Description

The IXD_614SI is an automotive grade, high-speed gate driver that is qualified according to AEC Q100 standards.

The IXD_614SI output can source and sink 14A of peak current, while producing rise and fall times of less than 35ns.

Both the output and input are rated to 35V.

Features

  • AEC Q100 Qualified.
  • 14A Peak Source/Sink Drive Current.
  • Wide Operating Voltage Range: 4.5V to 35V.
  • AEC Q100 Grade 1 -40°C to +125°C Operating Temperature Range.
  • Logic Input Withstands Negative Swing of up to 5V.
  • Matched Rise and Fall Times.
  • Low Propagation Delay Time.
  • Low, 10A Supply Current.
  • Low Output Impedance.

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Datasheet preview – IXDN614SI

Datasheet Details

Part number IXDN614SI
Manufacturer IXYS
File Size 220.78 KB
Description Ultrafast MOSFET
Datasheet download datasheet IXDN614SI Datasheet
Additional preview pages of the IXDN614SI datasheet.

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Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION IXD_614SI Automotive Grade 14-Ampere, Low-Side, Ultrafast MOSFET Drivers Features • AEC Q100 Qualified • 14A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • AEC Q100 Grade 1 -40°C to +125°C Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V • Matched Rise and Fall Times • Low Propagation Delay Time • Low, 10A Supply Current • Low Output Impedance Applications • Automotive DC/DC Regulators • Electronic Power Steering • Electric Vehicle Power Train Drives • Brushless DC Motors Description The IXD_614SI is an automotive grade, high-speed gate driver that is qualified according to AEC Q100 standards.
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