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IXDN609 - 9-Ampere Low-Side Ultrafast MOSFET

This page provides the datasheet information for the IXDN609, a member of the IXDD609 9-Ampere Low-Side Ultrafast MOSFET family.

Description

The IXDD609/IXDI609/IXDN609 high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs.

The IXD_609 high-current output can source and sink 9A of peak current while producing voltage rise and fall times of less than 25ns.

Features

  • 9A Peak Source/Sink Drive Current.
  • Wide Operating Voltage Range: 4.5V to 35V.
  • -40°C to +125°C Extended Operating Temperature Range.
  • Logic Input Withstands Negative Swing of up to 5V.
  • Matched Rise and Fall Times.
  • Low Propagation Delay Time.
  • Low, 10A Supply Current.
  • Low Output Impedance.

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Datasheet preview – IXDN609

Datasheet Details

Part number IXDN609
Manufacturer IXYS
File Size 293.82 KB
Description 9-Ampere Low-Side Ultrafast MOSFET
Datasheet download datasheet IXDN609 Datasheet
Additional preview pages of the IXDN609 datasheet.

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Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION IXD_609 9-Ampere Low-Side Ultrafast MOSFET Drivers Features • 9A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V • Matched Rise and Fall Times • Low Propagation Delay Time • Low, 10A Supply Current • Low Output Impedance Applications • Efficient Power MOSFET and IGBT Switching • Switch Mode Power Supplies • Motor Controls • DC to DC Converters • Class-D Switching Amplifiers • Pulse Transformer Driver Description The IXDD609/IXDI609/IXDN609 high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs.
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