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IS61WV51216EEBLL Datasheet, ISSI

IS61WV51216EEBLL ram equivalent, 512k x 16 high speed aynchronous cmos static ram.

IS61WV51216EEBLL Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 866.18KB)

IS61WV51216EEBLL Datasheet

Features and benefits


* High-speed access time: 8ns, 10ns, 20ns
* Single power supply
  – 1.65V-2.2V VDD (IS61WV51216EEALL)
  – 2.4V-3.6V VDD (IS61/64WV5121.

Application

where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.

Description

The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly reliabl.

Image gallery

IS61WV51216EEBLL Page 1 IS61WV51216EEBLL Page 2 IS61WV51216EEBLL Page 3

TAGS

IS61WV51216EEBLL
512K
HIGH
SPEED
AYNCHRONOUS
CMOS
STATIC
RAM
ISSI

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