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IS61WV51216EDALL Datasheet 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Manufacturer: ISSI (now Infineon)

Overview: IS61WV51216EDALL IS61/64WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC JULY.

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General Description

The ISSI IS61WV51216EDALL and IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.

It is fabri- cated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Key Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single Power Supply.
  • Vdd = 1.65V to 2.2V (IS61WV51216EDALL).
  • Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL).

📁 Similar Datasheet

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Integrated Silicon Solution Logo IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS61WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

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