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IS61WV51216EDALL - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV51216EDALL Description

IS61WV51216EDALL IS61/64WV51216EDBLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC JULY 2020 .
The ISSI IS61WV51216EDALL and IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits.

IS61WV51216EDALL Features

* High-speed access times: 8, 10, 20 ns
* High-performance, low-power CMOS process
* Multiple center power and ground pins for greater noise immunity
* Easy memory expansion with CE and OE options
* CE power-down
* Fully static operation: no clock or r

IS61WV51216EDALL Applications

* where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance

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Datasheet Details

Part number
IS61WV51216EDALL
Manufacturer
ISSI
File Size
587.88 KB
Datasheet
IS61WV51216EDALL-ISSI.pdf
Description
512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

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512K HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM ISSI
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