IS61WV51216EDALL
FEATURES
- High-speed access times: 8, 10, 20 ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE options
- CE power-down
- Fully static operation: no clock or refresh required
- TTL patible inputs and outputs
- Single Power Supply
- Vdd = 1.65V to 2.2V (IS61WV51216EDALL)
- Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL)
- Packages available:
- 48-ball mini BGA (6mm x 8mm)
- 44-pin TSOP (Type II)
- Industrial and Automotive Temperature Support
- Lead-free available
- Data control for upper and lower bytes
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS61WV51216EDALL and
IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabri- cated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
When CE is HIGH (deselected),...
