IS61WV51216EDALL ram equivalent, 512k x 16 high-speed asynchronous cmos static ram.
* High-speed access times: 8, 10, 20 ns
* High-performance, low-power CMOS process
* Multiple center power and ground pins for greater
noise immunity
* Ea.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS61WV51216EDALL and
IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabri-
cated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit de.
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