Part IS61WV51216EDALL
Description 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Manufacturer ISSI
Size 587.88 KB
ISSI
IS61WV51216EDALL

Overview

  • High-speed access times: 8, 10, 20 ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Single Power Supply - Vdd = 1.65V to 2.2V (IS61WV51216EDALL) - Vdd = 2.4V to 3.6V (IS61/64WV51216EDBLL)
  • Packages available: - 48-ball miniBGA (6mm x 8mm) - 44-pin TSOP (Type II)
  • Industrial and Automotive Temperature Support