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IS61WV51216EEALL - 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

Datasheet Summary

Description

The ISSI IS61/64WV51216EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

Features

  • High-speed access time: 8ns, 10ns, 20ns.
  • Single power supply.
  • 1.65V-2.2V VDD (IS61WV51216EEALL).
  • 2.4V-3.6V VDD (IS61/64WV51216EEBLL).
  • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection.
  • Package Available: - 44-pin TSOP (Type II) - 48-pin TSOP (Type I) - 48-ball mini BGA (6mm x 8mm) - 54 pin TSOP (Type II).
  • Three state outputs.
  • Indu.

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Datasheet Details

Part number IS61WV51216EEALL
Manufacturer ISSI
File Size 866.18 KB
Description 512K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
Datasheet download datasheet IS61WV51216EEALL Datasheet
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IS61WV51216EEALL IS61/64WV51216EEBLL 512Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC AUGUST 2019 KEY FEATURES  High-speed access time: 8ns, 10ns, 20ns  Single power supply – 1.65V-2.2V VDD (IS61WV51216EEALL) – 2.4V-3.6V VDD (IS61/64WV51216EEBLL)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction.
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