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IS61WV51216BLL - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS61WV51216BLL datasheet PDF (IS61WV51216ALL included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 512k x 16 high-speed asynchronous cmos static ram.

Description

words by 16 bits.

ance CMOS technology.

Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE op- tions.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply VDD 1.65V to 2.2V (IS61WV51216ALL) speed = 20ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS61/64WV51216BLL) s.

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Note: The manufacturer provides a single datasheet file (IS61WV51216ALL_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY OCTOBER 2009 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE op- tions • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply VDD 1.65V to 2.2V (IS61WV51216ALL) speed = 20ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS61/64WV51216BLL) speed = 10ns for VDD 2.4V to 3.6V speed = 8ns for VDD 3.
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