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IS61WV51232ALL - 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Datasheet Summary

Description

by 32 bits.

CMOS technology.

Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE options.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply Vdd 1.65V to 2.2V (IS61WV51232Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV51232Bxx) spe.

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Datasheet Details

Part number IS61WV51232ALL
Manufacturer ISSI
File Size 251.27 KB
Description 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet download datasheet IS61WV51232ALL Datasheet
Additional preview pages of the IS61WV51232ALL datasheet.

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Full PDF Text Transcription

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IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY MARCH 2024 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply Vdd 1.65V to 2.2V (IS61WV51232Axx) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV51232Bxx) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.
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