IS61WV51216ALL
FEATURES
- High-speed access times:
8, 10, 20 ns
- High-performance, low-power CMOS process
- Multiple center power and ground pins for greater noise immunity
- Easy memory expansion with CE and OE op- tions
- CE power-down
- Fully static operation: no clock or refresh required
- TTL patible inputs and outputs
- Single power supply
VDD 1.65V to 2.2V (IS61WV51216ALL) speed = 20ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS61/64WV51216BLL) speed = 10ns for VDD 2.4V to 3.6V speed = 8ns for VDD 3.3V + 5%
- Packages available:
- 48-ball mini BGA (9mm x 11mm)
- 44-pin TSOP (Type II)
- Industrial and Automotive Temperature Support
- Lead-free available
- Data control for upper and lower bytes
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS61WV51216ALL/BLL and IS64WV51216BLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-perform- ance CMOS technology. This highly reliable process coupled with innovative circuit design techniques,...
