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IS42S83200J - 256Mb SYNCHRONOUS DRAM

Key Features

  • Clock frequency: 166, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single Power supply: 3.3V + 0.3V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercia.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42S83200C 256Mb Single Data Rate Synchronous DRAM
IS42S83200G 256Mb SYNCHRONOUS DRAM
IS42S83200L 256Mb SYNCHRONOUS DRAM
IS42S81600B 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S81600D 128-MBIT SYNCHRONOUS DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42S83200J, IS42S16160J IS45S83200J, IS45S16160J 32Meg x 8, 16Meg x16 SEPTEMBER 2020 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.