MJ11029 transistor equivalent, pnp transistor.
*Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATIN.
*Collector-Emitter Breakdown Voltage
: V(BR)CEO= -60V(Min.)
*High DC Current Gain-
: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A
*Complement to the NPN MJ11028
*Minimum Lot-to-Lot variations for robust device performance and re.
Image gallery
TAGS
Download (Size : 203.83KB)