Datasheet4U Logo Datasheet4U.com

MJ11028 - Silicon Darlington NPN Transistor

Description

The MJ11028 i a silicon Darlington NPN transistor in a TO

3 type package designed for use as an output device in general purpose amplifier applications.

Features

  • D High Gain Darlington Performance D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Monolithic Construction w/Built.
  • In Base.
  • Emitter Shunt Resistor Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 60V Collector.
  • Base Voltage, VCB.

📥 Download Datasheet

Datasheet preview – MJ11028

Datasheet Details

Part number MJ11028
Manufacturer NTE
File Size 62.24 KB
Description Silicon Darlington NPN Transistor
Datasheet download datasheet MJ11028 Datasheet
Additional preview pages of the MJ11028 datasheet.

📁 Similar Datasheet

  • MJ11028 - 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ11028 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (ON)
  • MJ11028 - COMPLEMENTARY DARLINGTON POWER TRANSISTOR (Seme LAB)
  • MJ11028 - Power Transistor (DIGITRON)
  • MJ11028 - NPN Transistor (INCHANGE)
  • MJ11020 - NPN Transistor (INCHANGE)
  • MJ11021 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
  • MJ11021 - DARLINGTON POWER TRANSISTORS (ON)
  • MJ11021 - Power Transistors (Mospec)
  • MJ11022 - 30 AMPERE DARLINGTON POWER TRANSISTORS (Motorola)
Other Datasheets by NTE
  • MJ11032 - Silicon NPN Transistor
  • MJ11033 - Silicon PNP Transistor
  • MJ10001 - Silicon NPN Transistor
  • MJ10004 - Silicon NPN Transistor
  • MJ10007 - Silicon NPN Transistor
  • MJ10009 - Silicon NPN Transistor
  • MJ10012 - NPN Silicon Power Darlington Transistor
  • MJ10015 - Silicon NPN Transistor

Full PDF Text Transcription

Click to expand full text
MJ11028 Silicon Darlington NPN Transistor High Current, General Purpose TO=3 Type Package Description: The MJ11028 i a silicon Darlington NPN transistor in a TO−3 type package designed for use as an output device in general purpose amplifier applications. Features: D High Gain Darlington Performance D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Monolithic Construction w/Built−In Base−Emitter Shunt Resistor Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . .
Published: |