KSE45H11 transistor equivalent, silicon pnp power transistor.
*Designed for use as a driver in DC/DC converters and
actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE.
*Collector-Emitter Breakdown Voltage
: V(BR)CEO= -80V(Min)
*High DC Current Gain
: hFE= 60(Min)@ (VCE= -1V, IC= -2A)
*Low Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ (IC= -8A, IB= -0.4A)
*Complement to Type KSE44H11
*Minimum Lot-t.
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