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IXTQ182N055T - N-ChannelMOSFET

Features

  • Drain Source Voltage- : VDSS= 55V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 3.3mΩ(Max).
  • Fast Switching.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.3mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 260 A IDM Drain Current-Single Plused 780 A PD Total Dissipation @TC=25℃ 480 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.