2SD1668 transistor equivalent, npn transistor.
*Designed for relay drivers,high speed inverters,converters
and other general high current switching applications.
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
*Low Collector Saturation Voltage-
: VCE(sat)= 0.4V(Max.)
*Wide Area of Safe Operation
*Complement to Type 2SB1135
*Minimum Lot-to-Lot variations for robust device
perform.
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