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2SD1663 - Power Transistor

Description

High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power switching applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCES Collector- Emitter Voltage 1300 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.7 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1663 isc website：www.iscsemi.
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