2SD1663 transistor equivalent, power transistor.
*Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
.
*High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1300V (Min.)
*High Switching Speed
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for pow.
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