| Part number | 2SD1663 |
|---|---|
| Datasheet | 2SD1663_InchangeSemiconductor.pdf |
| File Size | 208.77 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
|
·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1300V (Min.) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter...
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1662 | Silicon NPN Power Transistor |
| 2SD1601 | Power Transistor |
| 2SD1602 | Power Transistor |
| 2SD1604 | Power Transistor |
| 2SD1605 | Power Transistor |
| 2SD1606 | Silicon NPN Power Transistor |
| 2SD1608 | Power Transistor |
| 2SD1640 | Silicon NPN Power Transistor |
| 2SD1646 | Power Transistor |
| 2SD1653 | Power Transistor |
