2SD1662 transistor equivalent, silicon npn power transistor.
*Designed for high current switching application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
.
*High DC Current Gain
: hFE= 1000(Min.)@ IC= 15A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
*Low Collector Saturation Voltage
: VCE(sat) = 1.5V(Max.)@ IC= 15A
APPLICATIONS
*Designed for high current switching applic.
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