2SD1664 Datasheet | ROHM

Features 1) Low VCE(sat) = 0.15V(Typ.) (l C / l B = 500m A / 50m A) 2) pliments 2SB1132 / 2SB1237 - Structure Epitaxial planar type NPN silicon transistor - Dimensions (Unit : mm) 4.5+- 00..12 1.6 +- 0.1 1.5- +00..12 2SD1858 6.8 +- 0.2 2.5 +- 0.2 - + 0.1 - + 0.2 1.0 0.9 - + 0.3 2.5- +00..12 - + 0.2 (1) (2) (3) 0.4 +- 0.1 1.5 +- 0.1 0.5 +- 0.1 3.0 +- 0.2 0.4 +- 0.1 1.5 +- 0.1 ∗Abbreviated symbol: DA ROHM : MPT3 EIAJ : SC-62 ∗ Denotes h FE 0.65Max. 0.4- +00..015 0.5+- 0.1 (1) (2) (3) 2.54 2.54 (1) Base (2) Collector (3) Emitter ROHM : ATV - +0.5 1.05 0.45 +- 0.1 (1) Emitter (2) Collector (3) Base - Absolute maximum ratings (Ta=25C) Parameter Symbol Limits...