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2SD1664 - Medium Power Transistor

Key Features

  • 1) Low VCE(sat) = 0.15V(Typ. ) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237.
  • Structure Epitaxial planar type NPN silicon transistor.
  • Dimensions (Unit : mm) 2SD1664 4.5+.
  • 00..12 1.6 +.
  • 0.1 1.5.
  • +00..12 2SD1858 6.8 +.
  • 0.2 2.5 +.
  • 0.2 0.5.
  • + 0.1 4.4.
  • + 0.2 1.0 0.9 4.0.
  • + 0.3 2.5.
  • +00..12 1.0.
  • + 0.2 (1) (2) (3) 0.4 +.
  • 0.1 1.5 +.
  • 0.1 0.5 +.
  • 0.1 3.0 +.
  • 0.2 0.4.

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Datasheet Details

Part number 2SD1664
Manufacturer ROHM
File Size 102.38 KB
Description Medium Power Transistor
Datasheet download datasheet 2SD1664 Datasheet

Full PDF Text Transcription for 2SD1664 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1664. For precise diagrams, and layout, please refer to the original PDF.

Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 Features 1) Low VCE(sat) = 0.15V(Typ.) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237 Structure Epitaxial...

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= 500mA / 50mA) 2) Compliments 2SB1132 / 2SB1237 Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1664 4.5+−00..12 1.6 +− 0.1 1.5−+00..12 2SD1858 6.8 +− 0.2 2.5 +− 0.2 0.5 −+ 0.1 4.4 −+ 0.2 1.0 0.9 4.0 −+ 0.3 2.5−+00..12 1.0 −+ 0.2 (1) (2) (3) 0.4 +− 0.1 1.5 +− 0.1 0.5 +− 0.1 3.0 +− 0.2 0.4 +− 0.1 1.5 +− 0.1 ∗Abbreviated symbol: DA ROHM : MPT3 EIAJ : SC-62 ∗ Denotes hFE 0.65Max. 0.4−+00..015 0.5+− 0.1 (1) (2) (3) 2.54 2.54 (1) Base (2) Collector (3) Emitter ROHM : ATV 14.5 −+0.5 1.05 0.45 +− 0.

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