2SD1667 transistor equivalent, npn transistor.
*Designed for relay drivers,high-speed inverters,and other
general high-current switching applications.
ABSOLUTE MA.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
*Low Collector Saturation Voltage-
: VCE(sat)= 0.4V(Max.)@ IC= 3A
*Complement to Type 2SB1134
*Minimum Lot-to-Lot variations for robust device
performance and reliable operati.
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