2SA1306 transistors equivalent, silicon pnp power transistors.
*Power amplifier applications.
*Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
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*Good Linearity of hFE
*High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min)
*Complement to Type 2SC3298
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Power amplifier .
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