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CS4N65FA9R Datasheet, Huajing Microelectronics

CS4N65FA9R mosfet equivalent, silicon n-channel power mosfet.

CS4N65FA9R Avg. rating / M : 1.0 rating-113

datasheet Download (Size : 263.17KB)

CS4N65FA9R Datasheet
CS4N65FA9R
Avg. rating / M : 1.0 rating-113

datasheet Download (Size : 263.17KB)

CS4N65FA9R Datasheet

Features and benefits

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche ener.

Application

Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID .

Description

CS4N65F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow.

Image gallery

CS4N65FA9R Page 1 CS4N65FA9R Page 2 CS4N65FA9R Page 3

TAGS

CS4N65FA9R
Silicon
N-Channel
Power
MOSFET
Huajing Microelectronics

Manufacturer


Huajing Microelectronics

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