CS4N65A3R - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

performance and enhance the avalanche energy.

Key Features

l Fast Switching l Low ON Resistance(Rdson≤2.8Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test.

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CS4N65A3R silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS4N65A3R
Manufacturer	Huajing Microelectronics
File Size	219.58 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS4N65A3R Datasheet

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Silicon N-Channel Power MOSFET CS4N65 A3R ○R General Description： CS4N65 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤2.8Ω) l Low Gate Charge (Typical Data: 14.5nC) l Low Reverse transfer capacitances(Typical:3.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.