CS4N65A3HDY mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical: 8.5pF) l 100% Single Pulse avalanche ener.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
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Rating
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CS4N65 A3HDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching
VDSS ID PD(TC=25℃) RDS(ON)Typ
650 4 75 2
performance and enhance the avalanche energy. T.
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