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CS4N65A3TDY Datasheet Silicon N-Channel Power MOSFET

Manufacturer: Huajing Microelectronics

Datasheet Details

Part number CS4N65A3TDY
Manufacturer Huajing Microelectronics
File Size 236.76 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS4N65A3TDY Datasheet

General Description

: CS4N65 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The package form is TO-251, which accords with the RoHS standard.

Overview

Silicon N-Channel Power MOSFET CS4N65 A3TDY ○R General.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test.