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CS4N65A3TDY Datasheet, Huajing Microelectronics

CS4N65A3TDY mosfet equivalent, silicon n-channel power mosfet.

CS4N65A3TDY Avg. rating / M : 1.0 rating-14

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CS4N65A3TDY Datasheet

Features and benefits

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energ.

Application

Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID .

Description

CS4N65 A3TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po.

Image gallery

CS4N65A3TDY Page 1 CS4N65A3TDY Page 2 CS4N65A3TDY Page 3

TAGS

CS4N65A3TDY
Silicon
N-Channel
Power
MOSFET
CS4N65A3HD
CS4N65A3HDY
CS4N65A3R
Huajing Microelectronics

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