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CS4N65A3TDY Datasheet Huajing Microelectronics

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Huajing Microelectronics · CS4N65A3TDY File Size : 236.76KB · 1 hits

Features and Benefits

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.2pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter.

CS4N65A3TDY CS4N65A3TDY CS4N65A3TDY
TAGS
Silicon
N-Channel
Power
MOSFET
CS4N65A3TDY
CS4N65A3HD
CS4N65A3HDY
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