Datasheet4U Logo Datasheet4U.com

HYG110P04LQ1D - P-Channel MOSFET

General Description

GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications Switching application

Power Management in DC/DC converter.

Battery protection P-Channel MOSFET Ordering and Marking Information D U V G110P04L G110P04L G110P04L XXXYWXXXXX XXXYWXXXXX XXXYWXXXXX Package Code D: TO-

📥 Download Datasheet

Datasheet Details

Part number HYG110P04LQ1D
Manufacturer HUAYI
File Size 914.92 KB
Description P-Channel MOSFET
Datasheet download datasheet HYG110P04LQ1D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HYG110P04LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature  -40V/-50A RDS(ON)= 9.1mΩ(typ.)@VGS = -10V RDS(ON)= 12mΩ(typ.)@VGS = -4.5V  100% avalanche tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS GDS GDS TO-252-2L TO-251-3L TO-251-3S Applications  Switching application  Power Management in DC/DC converter.  Battery protection P-Channel MOSFET Ordering and Marking Information D U V G110P04L G110P04L G110P04L XXXYWXXXXX XXXYWXXXXX XXXYWXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XXXYWXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish; which are fully compliant with RoHS.