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HYG110P04LQ2C2 - P-Channel Enhancement Mode MOSFET

Description

-40V/-55A RDS(ON)= 9.0 mΩ (typ.) @VGS = - 10V RDS(ON)= 13.0 mΩ (typ.) @VGS = - 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5 6-8L Applications Switching Application Power M

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Datasheet Details

Part number HYG110P04LQ2C2
Manufacturer HUAYI
File Size 662.87 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG110P04LQ2C2 Datasheet

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Full PDF Text Transcription

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HYG110P04LQ2C2 Single P-Channel Enhancement Mode MOSFET Feature Description  -40V/-55A RDS(ON)= 9.0 mΩ (typ.) @VGS = - 10V RDS(ON)= 13.0 mΩ (typ.) @VGS = - 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available Pin Description DDDD DDDD SSSG GSSS Pin1 PDFN5*6-8L Applications  Switching Application  Power Management for DC/DC  Battery Protection Single P-Channel MOSFET Ordering and Marking Information C2 G110P04 XYMXXXXXX Package Code C2: PDFN5*6-8L Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS.
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